The IR2152 is a high voltage, high speed, self-oscillating power MOSFET and IGBT driver with both high and low side referenced output channels. It is fully operational to +600V and tolerant to negative transient voltage. It features undervoltage lockout, programmable oscillator frequency, and matched propagation delay for both channels.
The IR2152 is a high‑voltage, high‑speed driver designed for MOSFET and IGBT half‑bridge applications. It features a floating high‑side channel for bootstrap operation and matched propagation delays for both high‑ and low‑side outputs, making it suitable for 50% duty‑cycle designs.\n\nKey specifications include a maximum voltage rating of 600 V, typical deadtime of 1.2 µs, and support for 8‑lead PDIP and SOIC packages. The device incorporates a programmable oscillator, undervoltage lockout, and internal zener clamp for robust operation across a wide temperature range.
| Maximum voltage rating | 600 V |
|---|---|
| Typical duty cycle | 50 % |
| Output voltage range | 10 V‑20 V |
| Typical deadtime | 1.2 µs |
| Package types | 8‑Lead PDIP, 8‑Lead SOIC |
The device is rated for a maximum voltage of 600 V.
Typical deadtime is 1.2 µs.
It is offered in 8‑lead PDIP and 8‑lead SOIC packages.
The device can operate from –40 °C to 125 °C ambient temperature.