The AOD409 is a P-Channel Enhancement Mode Field Effect Transistor produced by Alpha & Omega Semiconductor, Ltd. It features RDS(ON) < 40mΩ (VGS = -10V) @ -20A and RDS(ON) < 55mΩ (VGS = -4.5V), making it ideal for high current load applications.
The AOD409 is a P‑Channel enhancement mode field‑effect transistor that uses advanced trench technology to achieve low gate charge, low on‑resistance, and high current capability. It is offered in a D‑PAK (TO‑252) package and is RoHS‑compliant, with a green product option (AOD409L) that is electrically identical.
Key specifications include a drain‑source breakdown voltage of –60 V, a gate‑source voltage rating of +20 V, continuous drain current of –26 A at 25 °C, and a pulsed drain current rating of –60 A. The device exhibits a typical input capacitance of 3600 pF and can dissipate up to 60 W at 25 °C, with a maximum junction temperature of 175 °C and thermal resistance values suitable for high‑current load applications.
| Drain‑Source Voltage (Vds) max | -60 V |
|---|---|
| Gate‑Source Voltage (Vgs) max | +20 V |
| Continuous Drain Current (Id) at 25 °C | -26 A |
| Pulsed Drain Current (Id) max | -60 A |
| Input Capacitance (Ciss) typical | 3600 pF |
| Junction‑to‑Ambient Thermal Resistance (typical) | 10 °C/W |
The AOD409 can withstand a drain‑source voltage of up to –60 V.
It is rated for a continuous drain current of –26 A at 25 °C.
The typical input capacitance (Ciss) is 3600 pF.