This document describes the features of the 2SK0620 (2SK620) Silicon N-Channel MOS FET, including high-speed switching and mini-type package for downsizing applications.
The Panasonic 2SK0620 is a small‑signal N‑channel MOSFET offered in a mini‑type 3‑pin package. The datasheet provides absolute maximum ratings, typical electrical characteristics, and mechanical dimensions for designers.
Key specifications include a 50 V drain‑source breakdown voltage, 200 mA maximum drain current, 150 mW power dissipation, and storage temperature range from –55 °C to +150 °C. Legal and export notices are also included.
| Drain‑to‑Source breakdown voltage (V_DSS) | 50 V |
|---|---|
| Gate‑to‑Source voltage (V_GS) | 8 V |
| Maximum drain current (I_D) | 200 mA |
| Allowable power dissipation (P_D) | 150 mW |
| Storage temperature range | -55 °C to +150 °C |
| Maximum junction temperature (Tj) | 150 °C |
| Input capacitance (Ciss) | 15 pF |
| Reverse transfer capacitance (Crss) | 1 pF |
The maximum drain current is 200 mA.
The device can be stored from –55 °C to +150 °C.
The drain‑to‑source breakdown voltage is 50 V.