This document describes the features and characteristics of the FDD13AN06A0 N-Channel PowerTrench® MOSFET product produced by Fairchild Semiconductor Corporation. The product has a drain-to-source voltage of 60V and a drain current of 50A, with an on-resistance of 13.5mΩ. In addition, the product features low Miller charge, low QRR body diode, and UIS capability. It is suitable for applications such as motor/body load control, ABS systems, powertrain management, injection systems, DC-DC converters and off-line UPS, distributed power architectures and VRMs, and primary switch for 12V and 24V systems.
The Fairchild FDD13AN06A0 is a 60 V, 50 A N‑Channel PowerTrench MOSFET designed for automotive and power‑train applications such as motor control, ABS, DC‑DC converters and UPS systems. The datasheet provides detailed electrical characteristics, thermal data, and recommended operating conditions.
Key sections include device features, maximum ratings, thermal resistance, package information, electrical parameters, and SPICE models for circuit simulation. The document also contains application notes, safety warnings, and trademark information.
| Drain‑to‑Source Voltage (VDS) | 60 V |
|---|---|
| Gate‑to‑Source Voltage (VGS) | ±20 V |
| Continuous Drain Current (ID) | 50 A |
| On‑Resistance (rDS(on)) | 0.0115 Ω typ |
| Total Gate Charge (Qg(tot)) | 22 nC typ |
| Power Dissipation (PD) | 115 W |
| Automotive Qualification | Qualified to AEC‑Q101 |
The device can handle a continuous drain current of 50 A (TC < 80 °C, VGS = 10 V).
The typical on‑resistance is 0.0115 Ω at ID = 50 A and VGS = 10 V.
Yes, the MOSFET is qualified to AEC‑Q101 for automotive use.