ZXT10P12DE6 is a 12V PNP silicon low saturation switching transistor, which has extremely low saturation voltage and switching losses, and is suitable for high efficiency, low voltage switching applications.
The ZXT10P12DE6 is a 4th‑generation ultra‑low saturation PNP transistor that uses Zetex's matrix structure and advanced assembly to achieve extremely low on‑state losses, making it suitable for high‑efficiency, low‑voltage switching circuits. Key features include low equivalent on‑resistance, saturation voltage as low as 0.8 V, and a continuous collector current rating of 3 A.
Typical applications are DC‑DC converters, power‑management functions, power switches and motor‑control circuits. Ordering information, device markings and package dimensions are provided for both tape and reel formats.
| Collector‑Emitter Voltage (Vceo) | 12 V |
|---|---|
| Emitter‑Base Voltage (Vebo) | 5 V |
| Power Dissipation (Pp, 25 °C) | 11 W |
| Thermal Resistance Junction‑to‑Ambient (RθJA, a) | 113 °C/W |
| Package Dimension A (min‑max) | 0.90‑1.45 mm |
The maximum collector‑emitter voltage is 12 V.
The typical saturation voltage is as low as 0.8 V.
The junction‑to‑ambient thermal resistance is 113 °C/W (typical).