This document introduces a new generation of trench MOSFETs from Zetex, which utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage power management applications.
The ZXMN6A09K is a 60 V N‑channel enhancement‑mode MOSFET offered in a DPAK (T0‑252) package. It features low on‑resistance, fast switching speed, low gate drive requirements, and a low threshold, making it suitable for high‑efficiency power‑management applications such as DC‑DC converters and motor control.
The datasheet lists absolute maximum ratings, electrical characteristics, thermal resistance, typical performance curves, and detailed package dimensions. Ordering information, pinout, and mechanical drawings are also included for designers.
| Drain‑source voltage (VDS) | 60 V |
|---|---|
| Gate‑source voltage (VGS) | +20 V |
| Continuous drain current (ID) @ VGS=10 V, 25 °C | 11.2 A |
| On‑resistance (RDS(on)) typical | 0.045 Ω |
| Total gate charge (Qg) typical | 15 nC |
| Package type | DPAK (T0‑252) |
The maximum drain‑source voltage is 60 V.
The typical on‑resistance is 0.045 Ω.
It is supplied in a DPAK (T0‑252) surface‑mount package.
The continuous drain current rating is 11.2 A.