ZXMN2B14FH is a low on-resistance, low gate drive capability N-channel enhancement mode MOSFET, suitable for DC-DC converters, power management functions, disconnect switches and motor control applications.
The ZXMN2B14FH is a trench‑type N‑channel enhancement MOSFET offered by Zetex. It features low on‑resistance and low gate‑drive capability, making it suitable for DC‑DC converters, power‑management functions, disconnect switches, and motor‑control applications. The device is supplied in a 3‑lead SOT‑23 package.
Key specifications include a 20 V drain‑source rating, 4.3 A continuous drain current, typical on‑resistance of 0.055 Ω at VGS = 4.5 V, and input capacitance of 872 pF. Thermal data, switching times, and typical characteristic curves are also provided to aid design engineers.
| Drain‑source voltage (VDS) | 20 V |
|---|---|
| Gate‑source voltage (VGS) | 8 V |
| Continuous drain current (ID) | 4.3 A |
| On‑resistance (RDS(on)) typical | 0.055 Ω @ VGS=4.5 V |
| Input capacitance (CISS) | 872 pF |
| Package type | SOT‑23 |
The device is rated for a maximum drain‑source voltage of 20 V.
Typical on‑resistance is 0.055 Ω when VGS is 4.5 V.
The MOSFET can handle a continuous drain current of 4.3 A at 25 °C.
It is supplied in a 3‑lead SOT‑23 surface‑mount package.