This product is a 12V PNP silicon low saturation switching transistor with extremely low on-state losses and extremely low saturation voltage, making it ideal for high efficiency, low voltage switching applications.
The ZXT13P12DE6 is a fourth‑generation ultra low‑saturation transistor that uses Zetex's matrix structure and advanced assembly to achieve extremely low on‑state losses, making it suitable for high‑efficiency, low‑voltage switching applications such as DC‑DC converters, power‑management functions, power switches and motor control.
The document provides absolute maximum ratings, electrical characteristics, thermal resistance data, typical characteristic curves and package dimensions, along with ordering information and device markings. It also includes notes on thermal performance for surface‑mounted devices on standard FR‑4 PCBs.
| Collector‑Emitter Voltage (V CEO) | -12 V (max) |
|---|---|
| Continuous Collector Current (I C) | 4 A |
| Base Current (I B) | -500 mA |
| Power Dissipation (P D) | 11 W (typical at 25 °C) |
| Junction‑to‑Ambient Thermal Resistance (RθJA) | 113 °C/W |
| Saturation Voltage (V CE(sat)) | 0.07 V – 0.10 V (typ) |
The device can handle a continuous collector current of 4 A.
The collector‑emitter breakdown voltage is –12 V (maximum).
The device is in a SOT‑23‑6 package with dimensions ranging from 0.90 mm to 3.00 mm depending on the pin.