ZXTN25012EFL is a 12V NPN low power transistor with features such as high peak current, low saturation voltage, and 6V reverse blocking voltage. It is suitable for applications such as MOSFET and IGBT gate driving, DC-DC conversion, LED driving, and interface between low voltage ICs and load.
The ZXTN25012EFL is a 12 V, SOT‑23 packaged NPN low‑power transistor offering high peak current capability and low saturation voltage, making it suitable for pulse‑current applications. Key electrical parameters include a collector‑base voltage of 20 V, collector‑emitter voltage of 12 V, and a continuous collector current of 2 A.
Typical applications are MOSFET and IGBT gate driving, DC‑DC conversion, LED driving, and interfacing low‑voltage ICs to loads. Ordering information, package dimensions, and full electrical characteristics are provided in the datasheet, along with safety and compliance notes.
| Collector‑emitter voltage (BVce) max | 12 V |
|---|---|
| Emitter‑collector voltage (BVeco) max | 4.5 V |
| Continuous collector current (Ic) max | 2 A |
The device can handle up to 2 A continuous collector current.
It is supplied in a 3‑lead SOT‑23 package.