This product is a low saturation 100V PNP transistor in SOT223 package, ideal for use in DC-DC circuits and various driving and power management functions.
The ZXTP2013G is a 100 V PNP medium‑power low‑saturation transistor packaged in an SOT‑223 outline. Its very low on‑state losses make it suitable for motor driving, line switching, high‑side switches, and subscriber line interface cards.
The datasheet lists absolute maximum ratings such as -100 V collector‑emitter voltage and 5 A continuous collector current, along with detailed electrical characteristics, thermal resistance, and package dimensions for designers.
| Collector‑Emitter Voltage (BVceo) | -100 V |
|---|---|
| Continuous Collector Current (Ic) | 5 A |
| Peak Pulse Current (Ipm) | -10 A |
| Power Dissipation at 25 °C (Pp) | 3.0 W |
| Junction‑to‑Ambient Thermal Resistance (RθJA) | 42 °C/W |
| Collector‑Emitter Saturation Voltage (VCE(SAT)) | -20 mV (typ) |
The maximum collector‑emitter voltage is -100 V.
It can handle a continuous collector current of 5 A.
The device is packaged in an SOT‑223 outline.
ZXTP2013GTA is available in 1,000‑unit reels and ZXTP2013GTC in 4,000‑unit reels.