The ZXMN3A01E6 is a 30V N-channel enhancement mode MOSFET from Texas Instruments. Its features are low on-resistance, fast switching speed, low threshold voltage, low gate drive current, and it is suitable for high efficiency, low voltage, power management applications.
The Zetex ZXMN3A01E6 is a 30 V N‑channel enhancement‑mode MOSFET designed for high‑efficiency, low‑voltage power‑management applications. The datasheet provides a summary of key features such as low on‑resistance, fast switching speed, low threshold and low gate‑drive requirements.
Detailed sections cover absolute maximum ratings, static and dynamic electrical characteristics, typical transfer curves, and full package dimensions with pad‑layout drawings. Ordering information and contact details for Zetex worldwide offices are also included.
| Drain‑Source Voltage (Vds) | 30 V |
|---|---|
| Gate‑Source Voltage (Vgs) | +20 V |
| Pulsed Drain Current (Idm) | 10 A |
| Power Dissipation (Pd) at 25 °C | 1.1 W |
| On‑Resistance (Rds(on)) | 0.106 Ω |
| Input Capacitance (Ciss) | 190 pF |
| Output Capacitance (Coss) | 38 pF |
| Reverse Transfer Capacitance (Crss) | 20 pF |
| Turn‑On Delay Time (td(on)) | 7 ns |
| Rise Time (tr) | 2.3 ns |
| Turn‑Off Delay Time (td(off)) | 6.6 ns |
| Gate Charge (Qg) | 2.3 nC |
| Total Gate Charge (Qg,total) | 3.9 nC |
The device is rated for a maximum drain‑source voltage of 30 V.
The static on‑resistance is 0.106 Ω.