This document introduces the features and characteristics of the IRS2111 half bridge driver.
The IRS2111(S)PbF is a high‑voltage, high‑speed power MOSFET and IGBT driver designed for half‑bridge applications. It features a floating high‑side channel, CMOS Schmitt‑triggered inputs, internal dead‑time, and a gate‑drive supply range of 10 V to 20 V.
The document lists absolute maximum ratings, recommended operating conditions, dynamic and static electrical characteristics, functional block diagrams, lead definitions, mechanical dimensions for tape‑and‑reel packaging, and part‑marking information. It also includes order codes for PDIP, SOIC, and tape‑and‑reel versions.
| High side floating supply voltage (VB) max | 625 V |
|---|---|
| Low side and logic fixed supply voltage (Voc) max | 25 V |
| Gate‑drive supply range | 10 V to 20 V |
| Turn‑on propagation delay (typ.) | 750 ns |
| Turn‑off propagation delay (typ.) | 150 ns |
| Package power dissipation (PDIP) @ 25 °C | 0.625 W |
| Thermal resistance, junction‑to‑ambient (SOIC) | 200 °C/W |
The recommended gate‑drive supply voltage is between 10 V and 20 V for both high‑side and low‑side channels.
The PDIP package can dissipate up to 0.625 W at an ambient temperature of 25 °C.