The IR2111(S) is a high voltage, high speed power MOSFET and IGBT driver with dependent high and low side referenced output channels designed for half-bridge applications.
The IR2111 (S) & (PbF) driver provides high‑voltage, high‑speed MOSFET and IGBT gate control for half‑bridge applications. It features a floating bootstrap channel, 10‑20 V supply range, and built‑in dead‑time to prevent shoot‑through. The device is offered in lead‑free versions and packaged in 8‑lead PDIP or SOIC.
The datasheet includes absolute maximum ratings, recommended operating conditions, detailed electrical characteristics, pin assignments, mechanical dimensions, and lead‑free part marking information. Graphs illustrate timing, temperature, and voltage performance across the specified ranges.
| Maximum floating supply voltage (VOFFSET) | 600 V |
|---|---|
| Output supply voltage range (VOUT) | 10 V – 20 V |
| Typical dead‑time | 650 ns |
| Turn‑on propagation delay (typ.) | 550 ns |
| Turn‑off propagation delay (typ.) | 150 ns |
| Maximum power dissipation (PDIP) | 1.0 W |
The IR2111 can tolerate up to 600 V on the floating supply.
The driver operates with a gate‑drive supply of 10 V to 20 V.
Typical dead‑time is 650 ns.