The IR2106(4)(S) is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction.
The IR2106(4)(S) (PbF) is a high‑voltage driver designed for bootstrap operation, capable of driving N‑channel MOSFETs or IGBTs in high‑side configurations up to 600 V. It offers floating channel operation, undervoltage lockout, and compatible logic input levels from 3.3 V to 15 V.
The datasheet details absolute maximum ratings, recommended operating conditions, dynamic and static electrical characteristics, pin assignments, and timing diagrams. It also includes mechanical dimensions, lead‑free part marking information, and package options such as 8‑lead PDIP, 8‑lead SOIC, 14‑lead PDIP, and 14‑lead SOIC.
| Maximum high‑side floating voltage (VB) | 625 V |
|---|---|
| Ambient temperature range (Ta) | -40 °C to 125 °C |
| Logic input voltage range (VIN) | 10 V to 20 V |
| Turn‑on propagation delay (ton, typical) | 220 ns |
The driver is fully operational up to +600 V.
Logic inputs should be between 10 V and 20 V.