IRF8721PbF HEXFET is a power mosfet produced by irf company. It has the characteristics of very low gate charge, low on-state resistance and low gate impedance. It is suitable for synchronous buck converters and isolated dc-dc converters.
The IRF8721PbF is a HEXFET® Power MOSFET in an SO‑8 package, optimized for low Rds(on) and low gate charge to improve efficiency in synchronous buck converters for notebook and networking applications. The document provides the device’s electrical ratings, characteristic curves, and mechanical drawing information.
Key specifications include a 30 V drain‑to‑source rating, +20 V gate‑to‑source rating, 14 A continuous drain current at 25 °C, and a typical on‑resistance of 6.9 mΩ. Package dimensions, tape‑and‑reel handling, and test circuit guidelines are also included.
| Drain‑to‑Source Voltage (Vds) | 30 V |
|---|---|
| Gate‑to‑Source Voltage (Vgs) | +20 V |
| Continuous Drain Current (Id) @ 25 °C | 14 A |
| Pulsed Drain Current (Id,pulse) | 110 A |
| Power Dissipation (Pd) @ 25 °C | 2.5 W |
| On‑Resistance (Rds(on)) typical | 6.9 mΩ (Vgs=10 V, Id=14 A) |
| Total Gate Charge (Qg) typical | 83 nC |
The device is rated for a maximum drain‑to‑source voltage of 30 V.
The continuous drain current is 14 A at a junction temperature of 25 °C.
The gate‑to‑source voltage rating is +20 V.
Typical on‑resistance is 6.9 mΩ measured at Vgs = 10 V and Id = 14 A.