IRF7470 is a power mosfet produced by irf company. it has ultra-low gate impedance, very low RDS (on) and fully characterized avalanche voltage and current.
The IRF7470 is a high‑frequency, low‑on‑resistance power MOSFET designed for DC‑DC converters with synchronous rectification. The datasheet provides absolute maximum ratings, static and dynamic electrical characteristics, avalanche behavior, and diode parameters.
Package information, including SO‑8 dimensions, tape‑and‑reel handling, and recommended footprint, is also included, along with typical performance graphs for output, transfer, and safe operating area.
| Drain‑to‑Source Voltage (VDS) | 40 V |
|---|---|
| Gate‑to‑Source Voltage (VGS) | +12 V |
| Maximum Power Dissipation @ 25 °C | 2.5 W |
| Maximum Power Dissipation @ 70 °C | 1.6 W |
| Junction Temperature Range | -55 °C to +150 °C |
| Single Pulse Avalanche Energy (EAS) | 300 mJ |
| Package | SO‑8 |
The IRF7470 can withstand a maximum drain‑to‑source voltage of 40 V.
The IRF7470 is supplied in an SO‑8 surface‑mount package.