This product is a low voltage, high efficiency N channel enhancement mode MOSFET with a rated voltage of 40V and a rated current of 7A.
The ZXMN4A06G is a 40 V N‑channel enhancement‑mode MOSFET offered by Zetex. It features low on‑resistance, fast switching speed, and a low gate‑drive requirement, making it suitable for high‑efficiency, low‑voltage power‑management applications.
Typical applications include DC‑DC converters, audio output stages, relay and solenoid driving, and motor control. The document also lists ordering information, absolute maximum ratings, detailed electrical characteristics, and the SOT223 package outline.
| Drain‑Source Voltage (VDS) | 40 V |
|---|---|
| Gate‑Source Threshold Voltage (VGS(th)) | ≈1.0 V |
| On‑Resistance (RDS(on)) | 0.050 Ω (typical) |
| Input Capacitance (Ciss) | 770 pF |
| Turn‑On Delay Time (tON) | 2.55 ns |
| Package | SOT223 |
| Operating Temperature Range | -55 °C to +150 °C |
The device is rated for a maximum drain‑source voltage of 40 V.
Typical on‑resistance is 0.050 Ω.
It is supplied in an SOT223 surface‑mount package.
It is intended for DC‑DC converters, audio output stages, relay and solenoid driving, and motor control.