Key facts
- Brand
- Zetex
- Model
- ZXMN4A06G
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-07-02
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Zetex ZXMN4A06G 40V N-Channel Enhancement Mode MOSFET Datasheet
Datasheet 7 pages · 163 KB · EN
The ZXMN4A06G is a Trench MOSFET designed for high efficiency, low voltage power management applications. It features low on-resistance and fast switching speed, making it suitable for DC-DC converters, audio output stages, and motor control. The device is available in a SOT223 package.
Read onlineZetex ZXMN4A06G specifications
| Drain-Source Voltage | 40 V |
|---|---|
| Continuous Drain Current | 7.0 A |
| Power Dissipation | 2.0 W |
| Operating Temperature Range | -55 to +150 °C |
| Static Drain-Source On-State Resistance | 0.050 Ohm |
Source: Zetex ZXMN4A06G 40V N-Channel Enhancement Mode MOSFET Datasheet
All Zetex ZXMN4A06G documents by type
Datasheet 1
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum drain-source voltage rating?
The absolute maximum rating for the drain-source voltage is 40 V.
From: Zetex ZXMN4A06G 40V N-Channel Enhancement Mode MOSFET Datasheet
What is the maximum drain‑source voltage for the ZXMN4A06G?
The device is rated for a maximum drain‑source voltage of 40 V.
What is the typical on‑resistance of this MOSFET?
Typical on‑resistance is 0.050 Ω.