IRF5303 is a dual N-channel MOSFET from International Rectifier with a maximum voltage rating of 20V, a maximum current rating of 5.4A, and a maximum power dissipation rating of 1.3W. It features an extremely low on-resistance, making it ideal for a wide variety of applications.
The IRF740 is a dual‑N‑channel HEXFET power MOSFET featuring low on‑resistance and a compact Micro8 package. It is designed for high‑efficiency applications where board space is limited.
The datasheet provides maximum ratings, electrical characteristics, thermal performance, and detailed package dimensions, along with tape‑and‑reel handling information for manufacturing. This manual is written in Chinese.
| Drain‑Source Voltage (VDS) | 20 V |
|---|---|
| Continuous Drain Current (ID) @ 25°C | 5.4 A |
| Continuous Drain Current (ID) @ 70°C | 4.3 A |
| On‑Resistance (RDS(on)) | 0.030 Ω |
| Gate Threshold Voltage (VGS(th)) | 0.60 – 1.2 V |
| Power Dissipation (PD) @ 25°C | 1.3 W |
The IRF740 can withstand up to 20 V between drain and source.
The device can carry a continuous drain current of 5.4 A at 25 °C.
The typical on‑resistance is 0.030 Ω.