Update: 28 September, 2023
This document describes the features of International Rectifier's Fifth Generation HEXFET® Power MOSFET PD - 9.1239D. The device has ultra-low on-resistance, dual N-channel, surface mount, and other characteristics, making it suitable for a wide range of applications. It utilizes advanced processing techniques to achieve the lowest possible on-resistance per silicon area. Additionally, it has fast switching speed and rugged design, making it an extremely efficient device. The package has been modified for enhanced thermal characteristics and multiple-die capability, making it ideal for various power applications. With these improvements, multiple devices can be used in an application, significantly reducing board space. The package is compatible with vapor phase, infrared, or wave soldering techniques. Power dissipation greater than 0.8W is achievable in a typical PCB mount application.
File format: PDF
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MD5 Checksum: 09A5810E8CB3B8299643624D1B13AEEC
Publication date: 10 April, 2012
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PDF Link: INTERNATIONAL RECTIFIER IRF7303 HEXFET Power MOSFET Manual PDF