This product is a low voltage, high efficiency N-channel enhancement mode MOSFET. Its features are low on-resistance and fast switching speed, and it is suitable for DC-DC converters, power management functions, disconnect switches and motor control applications.
The ZXMN10B08E6 is a 100 V N‑channel enhancement mode MOSFET designed for low on‑resistance and fast switching, suitable for power‑management applications such as DC‑DC converters, disconnect switches, and motor control. The device is offered in a SOT‑23‑6 surface‑mount package with detailed ordering information and pin‑out.
The datasheet provides absolute maximum ratings, electrical characteristics, typical performance curves, and package dimensions. It also includes contact details for Zetex offices worldwide and a disclaimer about the provisional nature of the information.
| Drain‑Source Voltage (V_DSS) | 100 V |
|---|---|
| Continuous Drain Current (I_D) | 1.9 A |
| On‑Resistance (R_DS(on)) | 0.230 Ω (typ) |
| Gate Threshold Voltage (V_GS(th)) | 1.0‑3.0 V |
| Input Capacitance (Ciss) | 497 pF |
| Output Capacitance (Coss) | 29 pF |
| Turn‑On Delay (t_d(on)) | 2.9 ns |
| Turn‑Off Delay (t_d(off)) | 12.1 ns |
| Package Type | SOT‑23‑6 |
| Package Dimension A (min‑max) | 0.90 mm – 1.45 mm |
The device is rated for a maximum drain‑source voltage of 100 V.
The typical on‑resistance is 0.230 Ω.
It is supplied in a SOT‑23‑6 surface‑mount package.
The continuous drain current is specified as 1.9 A at 25 °C.