This product is a 60V NPN low saturation transistor packaged in the SOT223 outline, which offers extremely low on state losses, making it ideal for use in DC-DC circuits and various driving and power management functions.
The ZXTN2010G transistor offers extremely low on‑state resistance (RSAT = 35 mV at 6 A) and very low saturation voltages, making it suitable for DC‑DC converters, motor drivers, solenoid and relay drivers, and backlight inverters. It is supplied in a compact SOT‑223 surface‑mount package.
Typical specifications include a collector‑emitter voltage rating of 60 V, continuous collector current of 6 A, peak pulse current of 20 A, and a transition frequency of 130 MHz. Ordering information, pinout, and detailed electrical characteristics are provided for designers.
| Collector‑emitter voltage (BVCEO) | 60 V |
|---|---|
| Continuous collector current (IC) | 6 A |
| Peak pulse current (ICM) | 20 A |
| Transition frequency (fT) | 130 MHz |
| Thermal resistance (junction‑to‑ambient) | 42 °C/W |
| Package | SOT‑223 |
The device is rated for a maximum collector‑emitter voltage of 60 V.
It can carry up to 6 A continuous collector current.
The transistor is supplied in an SOT‑223 surface‑mount package.
Typical applications include emergency lighting circuits, motor driving (including DC fans), solenoid, relay and actuator drivers, DC modules, and backlight inverters.