FQPF65N06 is a 60V N-Channel MOSFET produced by Fairchild. It features fast switching speed and strong anti-surge ability, making it suitable for automotive applications, DC/DC power converters and other low-voltage applications.
The FQPF65N06 MOSFET is an N‑Channel enhancement mode power transistor built with Fairchild’s planar stripe DMOS technology. It is designed for low‑voltage applications such as automotive, DC‑DC converters, and high‑efficiency power management in portable and battery‑operated products.
Key specifications include a 60 V drain‑source rating, 40 A continuous drain current at 25 °C, 0.016 Ω typical on‑resistance, and a maximum junction temperature of 175 °C. The device is supplied in a TO‑220F package and is fully avalanche‑tested.
| Drain‑Source Voltage (VDS) | 60 V |
|---|---|
| Continuous Drain Current (ID) at 25 °C | 40 A |
| Pulsed Drain Current (ID) (Note 1) | 160 A |
| Gate Threshold Voltage (VGS(th)) | 2.0 – 4.0 V |
| Typical On‑Resistance (RDS(on)) | 0.016 Ω |
| Power Dissipation (PD) at 25 °C | 56 W |
| Junction‑to‑Case Thermal Resistance (RθJC) | 2.66 °C·W |
| Maximum Junction Temperature | 175 °C |
The device is rated for a maximum drain‑source voltage of 60 V.
It can handle up to 40 A continuous drain current at a case temperature of 25 °C.
The typical on‑resistance is 0.016 Ω.
It is supplied in a TO‑220F package.