The document introduces the features and characteristics of the N-channel 1000V SuperMESH™ MOSFET series produced by ST. These features include extremely low on-resistance, extremely high dv/dt capability, improved ESD capability, 100% avalanche rated, minimized gate charge, very low intrinsic capacitances, and very good manufacturing repeatability. This series is suitable for high current, high-speed switching, and offline power supply applications.
The STP5NK100Z, STF5NK100Z and STW5NK100Z are part of STMicroelectronics' SuperMESH™ MOSFET family. They offer 1000 V drain‑source voltage, Zener‑protected gate‑to‑source structures, and very low on‑resistance for high‑current, high‑speed switching applications such as offline power supplies.
The devices are available in TO‑220, TO‑220FP and TO‑247 packages and feature an avalanche‑rated design, improved ESD capability, and minimized gate charge. Detailed electrical, thermal and mechanical specifications are provided for designers.
| Drain‑Source Voltage (VDS) | 1000 V |
|---|---|
| Pulsed Drain Current (ID,pulse) | 14 A |
| Typical On‑Resistance (RDS(on)) | 2.7 mΩ |
| Avalanche Current (IAvalanche) | 3.5 A |
The MOSFETs are rated for a maximum drain‑source voltage of 1000 V.
Typical on‑resistance is about 2.7 mΩ.