This document describes the features and characteristics of a power MOSFET called STD60NF06, which is an N-channel 60V 60A device. This product is manufactured using STMicroelectronics' unique STripFET process and is designed to minimize input capacitance and gate charge. It is suitable for high-efficiency isolated DC-DC converters, UPS, motor control, and other applications.
The STD60NF06 is an N‑channel 60 V power MOSFET realized with STMicroelectronics' STripFET™ process. It is designed for low input capacitance and gate charge, making it suitable for high‑efficiency isolated DC‑DC converters, UPS, motor control, and automotive applications.
The datasheet lists absolute maximum ratings, thermal characteristics, avalanche behavior, switching parameters, and mechanical dimensions. Key specifications include a typical on‑resistance of 0.014 Ω, continuous drain current of 60 A at 25 °C, and a total power dissipation of 110 W. Detailed graphs illustrate safe operating area, gate charge, and temperature effects.
| Drain‑source Voltage (Vds) | 60 V |
|---|---|
| Continuous Drain Current (Id) at 25 °C | 60 A |
| Typical On‑Resistance (Rds(on)) | 0.014 Ω |
| Total Power Dissipation (Pd) at 25 °C | 110 W |
| Output Capacitance (Coss) | 360 pF |
| Thermal Resistance Junction‑case (RθJC) | 1.36 °C/W |
| Maximum Avalanche Current (Iav) | 30 A |
The maximum continuous drain current at 25 °C is 60 A.
The typical on‑resistance (Rds(on)) is 0.014 Ω.
It can dissipate up to 110 W at 25 °C.