This document describes the features and characteristics of the IPB60R125CP CoolMOSTM power transistor, including the lowest figure-of-merit RONxQg, ultra-low gate charge, extreme dv/dt rating, high peak current capability, etc. The product is specially designed for hard switching topologies in the server and telecom industries.
The Infineon IPB60R125CP CoolMOS power transistor datasheet provides a comprehensive overview of the device’s specifications, including maximum ratings, thermal characteristics, and dynamic performance. It details the transistor’s suitability for hard‑switching topologies in server and telecom applications, highlighting its low on‑resistance, ultra‑low gate charge, and high peak current capability.
Key sections cover static and dynamic electrical characteristics, gate‑charge curves, typical output behavior, and mechanical outlines for the TO‑263 package. The document also includes safety and compliance notes, as well as contact information for Infineon Technologies AG.
| Continuous drain current (Id) at 25 °C | 25 A |
|---|---|
| Pulsed drain current (Id) at 25 °C | 82 A |
| Gate charge (Qg) total | 53 nC |
The maximum continuous drain current is 25 A at 25 °C.
The total gate charge is 53 nC from 0 V to 10 V.