BAR50 series is a silicon PIN diode produced by Texas Instruments. It has low capacitance, low forward resistance and low harmonics, which is suitable for RF switch and attenuating applications.
The BAR50 series silicon PIN diodes are designed for switching and attenuation in RF applications from 10 MHz up to 6 GHz. They feature very low capacitance at zero‑bias reverse voltage, low forward resistance, and minimal harmonic generation, making them suitable for mobile communication antenna switches.
The datasheet provides maximum ratings, thermal resistance, DC and AC electrical characteristics, capacitance versus frequency, forward and reverse resistance curves, permissible pulse load limits, insertion loss, and isolation data for the various package types (e.g., BAR50‑02L, BAR50‑02V, BAR50‑03W, BAR50‑05).
| Reverse voltage (Vp) | 50 V |
|---|---|
| Forward current (If) | 100 mA |
| Operating temperature range | -55 °C to 125 °C |
| Storage temperature range | -55 °C to 150 °C |
| Reverse current (Ir) | 50 nA (typ.) |
| Forward voltage (Vf) at 10 mA | 0.95 V (typ.) |
| Diode capacitance at 1 MHz, V=0 V | 0.15 pF (typ.) |
The diodes can withstand up to 50 V reverse voltage.
Typical forward voltage is 0.95 V at 10 mA.
They operate from –55 °C up to 125 °C.
Typical reverse current is 50 nA.