This document describes the features and characteristics of the SMBT2222A/MMBT2222A NPN silicon switching transistor released in 2006, including high DC current gain and low collector-emitter saturation voltage.
The SMBT2222A/MMBT2222A is an NPN silicon switching transistor offering high DC current gain from 0.1 mA to 500 mA and low collector‑emitter saturation voltage. It is supplied in a SOT‑23 package and is complementary to the SMBT2907AW PNP device.
The document provides maximum ratings, DC and AC electrical characteristics, transition frequency, capacitances, thermal resistance, and package dimensions, along with test circuit illustrations and handling warnings.
| Collector‑emitter breakdown voltage (VCEO) | 40 V |
|---|---|
| Collector‑base breakdown voltage (VCBO) | 75 V |
| Emitter‑base breakdown voltage (VEB0) | 6 V |
| Maximum collector current (IC) | 600 mA |
| Total power dissipation (Ptot) | 330 mW |
| Maximum junction temperature (Tj) | 150 °C |
| Storage temperature range (Tstg) | -65 °C to 150 °C |
| Transition frequency (fT) | 300 MHz |
| Collector‑base capacitance (Ccb) | 2.5 pF |
| Emitter‑base capacitance (Ceb) | 35 pF |
| Collector‑emitter saturation voltage (VCE(sat)) | 0.3 V |
| Package type | SOT‑23 |
The maximum collector current is 600 mA.
The device is rated for a collector‑emitter breakdown voltage of 40 V.
It is supplied in a SOT‑23 surface‑mount package.
The transition frequency is specified as 300 MHz.