IPA60R125CP CoolMOS is the world’s smallest N-channel MOSFET with a RDS(on) of 0.125 Ω. It features ultra-low gate charge, extreme dv/dt rating, high peak current capability and is qualified according to JEDEC for target applications and is Pb-free lead plating and RoHS compliant.
The Infineon IPA60R125CP is a CoolMOS® power transistor in a TO‑220 package, designed for high‑performance switching applications. It offers ultra‑low gate charge, high peak current capability, and is RoHS compliant.
The document provides detailed electrical, thermal, and dynamic characteristics, including maximum ratings, capacitances, gate‑charge data, and typical output curves, as well as package dimensions and legal disclaimer information.
| Continuous drain current (Id) @ 25 °C | 25 A |
|---|---|
| Pulsed drain current (Id,pulse) @ 25 °C | 82 A |
| Drain‑source breakdown voltage (Vds) | 600 V |
| Gate threshold voltage (Vgs(th)) | 3 – 3.5 V |
| Input capacitance (Ciss) @ 1 MHz | 2500 pF |
| Output capacitance (Coss) @ 1 MHz | 120 pF |
| Power dissipation (Pd) @ 25 °C | 35 W |
| Operating temperature range | -55 °C to 150 °C |
The continuous drain current is rated at 25 A at 25 °C.
The device can dissipate up to 35 W at a case temperature of 25 °C.
The gate‑threshold voltage ranges from 3 V to 3.5 V.
The input capacitance is 2500 pF measured at 1 MHz.