The SKW25N120 is a fast IGBT from Infineon that uses NPT technology and has a soft, fast-recovery anti-parallel EmCon diode. It can operate between -55 and 150 degrees Celsius, has a short circuit withstand time of 10 microseconds, and can handle a maximum current of 25 amps and a maximum voltage of 1200 volts.
The SKW25N120 is a fast IGBT in Infineon's NPT technology, designed for motor controls, inverters and SMPS applications. The datasheet provides maximum ratings, thermal resistance values, static and dynamic electrical characteristics, and detailed switching performance graphs.
Key sections include maximum voltage and current ratings, thermal resistance (junction‑to‑case 0.4 K/W, junction‑to‑ambient 40 K/W), gate‑emitter thresholds, and switching energy losses across a range of collector currents and temperatures.
| Collector‑emitter voltage (VCE) | 1200 V |
|---|---|
| Power dissipation (P_D) at 25 °C | 313 W |
| Junction‑to‑case thermal resistance (RthJC) | 0.4 K/W |
| Gate‑emitter voltage (VGE) | +20 V |
| Short‑circuit withstand time (t_sc) | 10 µs |
The device is rated for a maximum collector‑emitter voltage of 1200 V.
It can dissipate up to 313 W when the case temperature is 25 °C.
The IGBT can tolerate a short circuit for up to 10 µs.
The junction‑to‑case thermal resistance is 0.4 K/W.