This document provides technical information and electrical properties of the BSM50GB120DLC IGBT module. The module features a maximum collector-emitter voltage of 1200V, a DC collector current of 50A, and a repetitive peak collector current of 115A.
This technical information sheet describes the BSM50GB120DLC IGBT module, presenting its electrical characteristics such as collector‑emitter voltage, continuous current, gate thresholds and power dissipation. It also includes typical output and transfer characteristics, switching loss curves, and safe operating area limits.
Additional sections cover thermal resistance values, maximum junction temperature, mechanical data like mounting torque and weight, and the terms and conditions for product use. The document is intended for technically trained personnel who need detailed specifications for design and integration. This manual is written in German.
| Collector‑emitter voltage (Vces) | 1200 V |
|---|---|
| Continuous collector current (Ic) | 50 A |
| Gate‑emitter peak voltage (Vge) | 20 V |
| Total power dissipation | 460 W |
| Maximum junction temperature | 150 °C |
| Weight | 250 g |
The module is rated for a collector‑emitter voltage of 1200 V.
The maximum junction temperature is specified as 150 °C.
The module can dissipate up to 460 W of power.