SDT02S60 is a 600V Schottky diode made of SiC. It has no reverse recovery, no temperature influence, no forward recovery, and excellent performance.
The Infineon SDT02S60 is a silicon‑carbide Schottky diode rated for 600 V reverse voltage. This datasheet presents the device’s electrical, thermal and mechanical characteristics for designers and engineers.
Key data include forward current ratings, forward voltage drop, reverse leakage, power dissipation, thermal resistance values and package dimensions. The document also provides characteristic curves for forward and reverse behavior, capacitance, and transient thermal impedance.
| Repetitive peak reverse voltage (VRRM) | 600 V |
|---|---|
| Continuous forward current (Ir) | 2 A |
| Forward voltage at 2 A, 25 °C | 1.75 V |
| Reverse leakage current at 600 V, 25 °C | 7 µA |
| Power dissipation at 25 °C | 15 W |
| Thermal resistance, junction‑to‑case | 10 K/W |
| Thermal resistance, junction‑to‑ambient (leaded) | 62 K/W |
The diode is rated for a repetitive peak reverse voltage of 600 V.
It can conduct a continuous forward current of 2 A.
The forward voltage is 1.75 V under those conditions.