Infineon SPW15N60CFD Datasheet

The SPW15N60CFD CoolMOSTM power transistor features intrinsic fast-recovery body diode, extremely low reverse recovery charge, ultra-low gate charge, extreme dv/dt rating, high peak current capability, etc. It is designed for soft-switching PWM stages, LCD and CRT TVs.


Infineon SPW15N60CFD Datasheet - cover page
Brand
Infineon
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
12
File format
PDF
File size
844 KB
Published
06 April, 2012
Updated
29 September, 2023
MD5 checksum
6AB3E5FF5ECBCDA897B4EB2882EB4898

About this manual

The SPW15N60CFD is a CoolMOS™ power transistor designed for soft‑switching PWM stages and TV drain applications. It features an intrinsic fast‑recovery body diode, ultra‑low gate charge, and high peak current capability, qualified according to JEDEC standards.

The datasheet lists electrical, thermal, and dynamic parameters such as a continuous drain current of 13.4 A, a drain‑source voltage rating of 600 V, total gate charge of 63 nC, and a power dissipation capability of 156 W at 25 °C. Mechanical dimensions and packaging details for the PG‑TO‑247 case are also provided.

What's inside

  • Product Summary
  • Maximum Ratings
  • Thermal Characteristics
  • Electrical Characteristics
  • Dynamic Characteristics
  • Reverse Diode
  • Power Dissipation
  • Safe Operating Area
  • Typical Output Characteristics
  • Mechanical Dimensions

Specifications

Continuous drain current (Id)13.4 A
Total gate charge (Qg)63 nC
Input capacitance (Ciss)1820 pF
Reverse recovery time (trr)147 ns
Power dissipation (Pd)156 W
Operating temperature range-55 °C to 150 °C

Frequently asked questions

What is the maximum continuous drain current of the SPW15N60CFD?

The maximum continuous drain current is 13.4 A at 25 °C.

How much total gate charge does the transistor have?

The total gate charge is 63 nC (measured from 0 to 10 V).

What is the reverse recovery time of the built‑in diode?

The reverse recovery time is 147 ns.

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