This document describes the features and characteristics of the BFR380F NPN silicon RF transistor, such as high current capability, low noise figure, and low voltage operation. It is ideal for wide dynamic range applications and low phase noise oscillators up to 3.5 GHz.
The BFR380F is an N‑type silicon RF transistor designed for high‑current capability, low voltage operation, and low noise figure, making it suitable for low‑phase‑noise oscillators up to 3.5 GHz. It offers a maximum collector‑emitter voltage of 6 V and a collector current of 80 mA.
The datasheet lists detailed DC and AC characteristics, including a transition frequency of 11‑14 GHz, noise figure of 1.1 dB at 1.8 GHz, and a complete SPICE Gummel‑Poon model. Thermal resistance, permissible pulse load, and power‑gain curves are also provided for design and simulation purposes.
| Collector‑emitter voltage (VCEO) | 6 V |
|---|---|
| Collector current (Ic) | 80 mA |
| Transition frequency (fT) | 11‑14 GHz |
| Noise figure | 1.1 dB at 1.8 GHz |
| Maximum power dissipation | 380 mW |
| Junction temperature (Tj) | 150 °C |
| Package | TSFP‑3 |
The maximum collector current is 80 mA.
The transition frequency ranges from 11 GHz to 14 GHz.
The noise figure is 1.1 dB at 1.8 GHz.
It is supplied in a TSFP‑3 surface‑mount package.