SPA20N60CFD is CoolMOSTM Power Transistor, features new revolutionary high voltage technology, intrinsic fast-recovery body diode, extremely low reverse recovery charge and ultra low gate charge, Extreme dv/dt rated, High peak current capability, Periodic avalanche rated and qualified according to JEDEC0) for target applications
The SPA20N60CFD is a CoolMOS™ power transistor offered by Infineon Technologies. The document presents a detailed product summary, including key features such as low gate charge, high dv/dt rating, and fast‑recovery body diode.
Technical data cover maximum ratings, thermal characteristics, static and dynamic electrical parameters, reverse‑diode behavior, and safe operating area. Compliance notes (JEDEC, RoHS) and handling warnings are also included.
| Continuous drain current (Id) | 20.7 A |
|---|---|
| Maximum power dissipation (P_D) | 35 W |
| Thermal resistance, junction‑case (Rjc) | 3.6 K/W |
| Gate charge total (Qg) | 95‑124 nC |
The device can handle a continuous drain current of 20.7 A at 25 °C.
The junction‑to‑case thermal resistance is 3.6 K/W.
Yes, the device is Pb‑free and RoHS compliant.