BSC022N03S OptiMOS®2 Power Transistor is a fast switching MOSFET for SMPS optimized for notebook DC/DC converters. It is qualified according to JEDEC1 for target applications. It features N-channel, logic level, very low on-resistance R DS(on), excellent gate charge x R DS(on) product (FOM), superior thermal resistance, avalanche rated, dv/dt rated.
The BSC022N03S is an N‑channel, logic‑level MOSFET designed for fast switching in SMPS and notebook DC/DC converters. It offers low on‑resistance, high current capability, and robust avalanche and dv/dt ratings.
The datasheet details electrical parameters such as continuous drain current, on‑state resistance, breakdown voltage, and gate thresholds, as well as thermal characteristics, dynamic switching data, and the P‑TDSON‑8 package dimensions. It also includes safety notices and contact information for Infineon Technologies.
| Continuous drain current (ID) | 50 A |
|---|---|
| On‑state resistance (RDS(on)) max | 2.2 mΩ |
| Input capacitance (Ciss) typical | 7490 pF |
| Power dissipation (Ptot) at 25 °C | 104 W |
| Junction‑to‑case thermal resistance (RthJC) | 1.2 K/W |
| Package type | P‑TDSON‑8 |
The device can handle a continuous drain current of 50 A at a case temperature of 25 °C.
The typical on‑state resistance is 2.2 mΩ under those conditions.
It is supplied in a P‑TDSON‑8 surface‑mount package.