The SPP07N60CFD CoolMOSTM power transistor features an intrinsic fast-recovery body diode, extremely low reverse recovery charge, ultra low gate charge, extreme dv/dt rating, high peak current capability, etc. It is designed for soft switching PWM stages, LCD, and CRT TV applications.
The Infineon SPP07N60CFD CoolMOS™ power transistor is presented with its key features, including an intrinsic fast‑recovery body diode, ultra‑low gate charge, high peak current capability, and qualification according to JEDEC standards. The document lists maximum ratings such as continuous drain current, pulsed current, avalanche energy, and power dissipation.
Detailed electrical, thermal, and dynamic characteristics are provided, covering parameters like drain‑source breakdown voltage, input and output capacitances, gate charge, reverse diode specifications, and typical output characteristics. Mechanical dimensions and legal disclaimer information conclude the sheet.
| Continuous drain current (Id) | 6.6 A |
|---|---|
| Pulsed drain current (Id,pulse) | 17 A |
| Power dissipation (P_D) | 83 W |
| Avalanche energy (single pulse) | 230 mJ |
| Drain‑source breakdown voltage (Vds) | 600 V |
| Input capacitance (Ciss) | 790 pF |
| Output capacitance (Coss) | 260 pF |
| Total gate charge (Qg) | 35‑47 nC |
| Reverse recovery time (tr) | 104 ns |
The continuous drain current is rated at 6.6 A at 25 °C.
The device can dissipate up to 83 W at 25 °C.
The input capacitance (Ciss) is 790 pF.