BSP 315 P SIPMOS Small-Signal-Transistor is a P-Channel, Enhancement mode, Avalanche rated, Logic Level, dv/dt rated electronic component.
This document presents the key characteristics of the Infineon BSP315P P‑channel small‑signal MOSFET. It includes product summary data, maximum ratings, and detailed electrical, thermal, and dynamic parameters.
The handbook also contains typical characteristic curves, avalanche energy information, and safety notices. All specifications are given for a junction temperature of 25 °C unless otherwise noted.
| Drain‑source voltage (VDS) | -60 V |
|---|---|
| On‑state resistance (RDS(on)) typical | 0.8 Ω |
| Gate‑source threshold voltage (VGS(th)) typical | -1.5 V |
| Power dissipation (PD) | 1.8 W |
| Avalanche energy (single pulse) | 24 mJ |
| Reverse diode forward voltage (VF) | 0.97 V |
| Input capacitance (CISS) typical | 130 pF |
| Output capacitance (COSS) typical | 40 pF |
| Total gate charge (Qg) typical | 5.2 nC |
The drain‑source breakdown voltage is –60 V.
The typical on‑state resistance (RDS(on)) is 0.8 Ω.
The device can dissipate up to 1.8 W.