Infineon SPW07N60CFD CoolMOS Power Transistor Datasheet

SPW07N60CFD CoolMOSTM Power Transistor is a power transistor with many features and characteristics, including intrinsic fast-recovery body diode, extremely low reverse recovery charge, ultra-low gate charge, extreme dv /dt rating, high peak current capability, etc. It is designed for applications such as soft switching PWM stages and LCD & CRT TVs.


Infineon SPW07N60CFD CoolMOS Power Transistor Datasheet - cover page
Brand
Infineon
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
12
File format
PDF
File size
662 KB
Published
06 April, 2012
Updated
29 September, 2023
MD5 checksum
801D1C4952F405CDD594ED0ED9C6506C

About this manual

The SPW07N60CFD is a CoolMOS power transistor designed for soft‑switching PWM stages in LCD and CRT TV applications. It features an intrinsic fast‑recovery body diode, ultra‑low gate charge, and high dv/dt capability, packaged in a PG‑TO‑247 case.

Key electrical parameters include a continuous drain current of 6.6 A, pulsed drain current of 17 A, a drain‑source voltage rating of 480 V, on‑state resistance of 0.59 mΩ at 25 °C, total gate charge of 35 nC, and a single‑pulse avalanche energy of 230 mJ. Thermal resistance and junction‑to‑ambient specifications are also provided for reliable design.

What's inside

  • Product Summary
  • Maximum Ratings
  • Thermal Characteristics
  • Electrical Characteristics
  • Dynamic Characteristics
  • Reverse Diode Characteristics
  • Typical Output Characteristics
  • Gate Charge Characteristics

Specifications

Drain‑source voltage (Vds)480 V

Frequently asked questions

What is the drain‑source breakdown voltage?

The rated drain‑source voltage is 480 V.

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