BSS159N is an N-channel depletion mode small-signal transistor, rated for dv/dt, available with VGS(th) indicator on reel, lead-free lead-plating, RoHS compliant.
The BSS159N is an N‑channel depletion‑mode MOSFET offered by Infineon Technologies. It is supplied in a Pb‑free SOT‑23 package and is RoHS compliant. The document provides detailed electrical, thermal, and dynamic characteristics, as well as package dimensions and handling information.
Key sections include product summary, maximum ratings, static and dynamic electrical characteristics, gate‑charge data, reverse‑diode behavior, safe operating area, and mechanical outline. Legal notices and contact information for Infineon are also included.
| Continuous drain current (Id) at 25 °C | 0.23 A typ |
|---|---|
| Pulsed drain current (Id) at 25 °C | 0.92 A typ |
| Power dissipation (P R) at 25 °C | 0.36 W |
| Gate‑source voltage (Vgs) rating | +20 V |
| Drain‑source breakdown voltage (Vds) | 60 V |
| Input capacitance (Ciss) | 33 pF typ |
| Output capacitance (Coss) at 1 MHz | 8.3 pF typ |
| Reverse transfer capacitance (Crs) | 3.9 pF typ |
| Turn‑on delay time (t_on) | 3.1 ns typ |
| Operating temperature range | -55 °C to 150 °C |
The maximum continuous drain current is 0.23 A (typical) at 25 °C.
The device is supplied in a Pb‑free SOT‑23 package.
It can operate from –55 °C up to 150 °C.
The input capacitance is 33 pF (typical).