This document describes the features and characteristics of BSP324 SIPMOS power transistors, including N-channel, enhancement mode, logic level, and dv/dt rating.
The BSP324 is an N‑channel enhancement‑mode SIPMOS power transistor designed for low‑voltage, high‑current applications. It features a logic‑level gate drive, a maximum drain current of 0.17 A at 25 °C, and a drain‑source breakdown voltage of 400 V.
Typical uses include switching regulators, load switches, and other power‑management circuits where compact SOT‑223 packaging and low on‑resistance are required. The datasheet includes detailed ratings, thermal characteristics, and dynamic parameters to aid designers in selecting and integrating the device.
| Gate‑source voltage (Vgs) | +20 V |
|---|---|
| Power dissipation (Pd) | 1.8 W (at 25 °C) |
The device is rated for a gate‑source voltage of +20 V.
It can dissipate up to 1.8 W at a case temperature of 25 °C.