The SDT05S60 is the world's first 600V Schottky diode, using a revolutionary semiconductor material - Silicon Carbide, with benchmark switching behavior, no reverse recovery, no temperature influence on the switching behavior and no forward recovery.
The SDT05S60 is a silicon‑carbide (SiC) Schottky diode offered by Infineon Technologies. It features a 600 V reverse voltage rating and a continuous forward current of 5 A, making it suitable for high‑efficiency power conversion applications. The device is supplied in a TO‑220‑2‑2 package and includes detailed thermal and electrical characteristics.
Key specifications include a forward voltage of 1.5‑1.7 V at 5 A (25 °C), reverse current of 19‑200 µA at 600 V, power dissipation of 43 W at 25 °C, and an operating temperature range of –55 °C to +175 °C. The datasheet also provides capacitance, transient thermal impedance, and mechanical dimensions for design integration.
| Continuous forward current (Ir) | 5 A |
|---|---|
| Repetitive peak forward current | 21 A |
| Repetitive peak reverse voltage | 600 V |
| Surge peak reverse voltage | 600 V |
| Power dissipation (Prot) | 43 W |
| Operating temperature range | -55 °C to +175 °C |
| Forward voltage (Vf) at 5 A, 25 °C | 1.5‑1.7 V |
| Reverse current at 600 V, 25 °C | 19‑200 µA |
| Total capacitance at 1 V, 1 MHz | 170 pF |
The diode can carry a continuous forward current of 5 A at 100 °C.
It is rated for a repetitive peak reverse voltage of 600 V.
The forward voltage is typically between 1.5 V and 1.7 V.