BFR 181W is a NPN silicon RF transistor, used for low noise, high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA, ft = 8 GHz, F = 1.45 dB, 900 MHz
The Infineon BFR 181W datasheet provides detailed specifications for the NPN silicon RF transistor, designed for low‑noise, high‑gain broadband amplifiers with collector currents from 0.5 mA to 12 mA. It lists the device’s package (SOT‑323), handling precautions, and typical application ranges.
Key sections include maximum ratings, DC and AC electrical characteristics, transition frequency, noise figure, power gain, and a complete SPICE Gummel‑Poon model. The document also shows power‑dissipation curves and capacitance values across bias conditions, enabling designers to simulate and integrate the transistor accurately.
| Collector‑emitter voltage (VCEO) | 12 V |
|---|---|
| Collector current (IC) | 20 mA |
| Transition frequency (fT) | 8 GHz |
| Noise figure at 900 MHz | 1.45 dB |
| Maximum power dissipation | 175 mW |
The maximum collector‑emitter voltage is 12 V.
The transition frequency is specified as 8 GHz.
The noise figure at 900 MHz is 1.45 dB.
A Gummel‑Poon model for Berkeley‑SPICE 2G.6 is included in the datasheet.