IPP50R520CP CoolMOSTM Power Transistor is a power transistor with the lowest RON x Qg, ultra low gate charge, extreme dv/dt rating, high peak current capability, Pb-free lead plating, RoHS compliant, qualified according to JEDEC1) for target applications. It is designed for hard- & softswitching SMPS topologies, DCM PFC for Lamp Ballast, PWM for Lamp Ballast, PDP and LCD TV.
The IPP50R520CP is a CoolMOS™ power transistor designed for hard‑ and soft‑switching SMPS topologies, lamp ballast, PDP and LCD TV applications. It features ultra‑low gate charge, extreme dv/dt rating, high peak current capability, and is RoHS compliant.
The datasheet lists detailed electrical, thermal, and dynamic characteristics, including continuous and pulsed drain currents, on‑state resistance, avalanche energy, and gate‑charge parameters, as well as package dimensions and safety information.
| Continuous drain current (Id) @ 25 °C | 71 A |
|---|---|
| Pulsed drain current (Id,pulse) @ 25 °C | 15 A |
| Maximum power dissipation @ 25 °C | 66 W |
| Operating temperature range | -55 °C to 150 °C |
| Drain‑source on‑state resistance (Rds(on)) | 0.47 – 0.52 mΩ |
| Total gate charge (Qg) | 13 – 17 nC |
| Avalanche energy (single pulse) | 166 mJ |
The continuous drain current is rated at 71 A at 25 °C.
It is supplied in a PG‑TO220 package.
The device can dissipate up to 66 W at a case temperature of 25 °C.
It can operate from –55 °C up to 150 °C.