This document describes the features and characteristics of a product called VDS.
The Infineon SPS02N60C3 is a high‑voltage, low‑gate‑charge MOSFET designed for power switching applications. The document provides maximum ratings, thermal and electrical characteristics, as well as typical performance curves.
Key sections include maximum ratings, thermal resistance, on‑state resistance, gate charge, switching times, and package dimensions. Legal and safety notices are also included at the end of the document.
| Continuous drain current (Id) @ 25°C | 1.8 A |
|---|---|
| Maximum power dissipation (P_D) | 29 W |
| Operating temperature range | -55 °C to +150 °C |
| Gate charge (Q_g) total @ Vgs=10 V, Id=1.8 A | 9.5–12.5 nC |
The device can handle a continuous drain current of 1.8 A at 25 °C.