This document describes the features and characteristics of the BFT92 PNP Silicon RF Transistor, suitable for broadband amplifiers up to 2 GHz with a maximum collector current of 30 mA.
The BFT92 is a PNP silicon RF transistor designed for broadband amplifiers up to 2 GHz with collector currents up to 30 mA. It is supplied in a SOT‑23 package and includes detailed DC and AC performance data.
The document lists maximum voltage and current ratings, thermal limits, transition frequency, and a complete Gummel‑Poon SPICE model. Additional package dimensions, marking layout, and ordering information are also provided.
| Collector‑emitter voltage (VCEO) | 15 V |
|---|---|
| Collector‑base voltage (VCBO) | 20 V |
| Emitter‑base voltage (VEB0) | 2 V |
| Collector current (IC) | 45 mA |
| Total power dissipation (PD) | 200 mW |
| Transition frequency (fT) | 3.5‑5 GHz |
| Package type | SOT‑23 |
| Maximum junction temperature | 150 °C |
The maximum collector‑emitter voltage is 15 V.
The BFT92 is supplied in a SOT‑23 surface‑mount package.
The transition frequency ranges from 3.5 GHz to 5 GHz.