This document is an TDP calculation table from Infineon, which mainly introduces how to calculate TDP
The SPW12N50C3 is a 560 V, 11.6 A Cool MOS™ power transistor featuring ultra‑low gate charge, low on‑resistance, and high avalanche capability. The datasheet provides detailed electrical, thermal, and safe‑operating‑area characteristics for designers.
Key sections include maximum ratings, thermal characteristics, electrical parameters, transient thermal impedance, and typical output characteristics, allowing engineers to evaluate performance and integrate the device into high‑voltage applications.
| Drain‑source voltage (VDS) | 560 V |
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The SPW12N50C3 is rated for a maximum drain‑source voltage of 560 V.