BFR93AW is a NPN silicon RF transistor produced by Rogers. It is suitable for low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5mA to 30mA
The BFR93AW is an N‑type silicon RF transistor designed for low‑distortion broadband amplifiers and oscillators up to 2 GHz. The document provides maximum ratings, DC and AC electrical characteristics, SPICE model parameters and package details for the SOT‑323 form factor.
Key data include a collector‑emitter voltage rating of 12 V, a maximum collector current of 90 mA, a transition frequency of 4.5 GHz, and typical capacitance values for the device. The datasheet also lists thermal resistance, recommended handling precautions and legal disclaimer information.
| Collector‑emitter voltage (VCEO) | 12 V |
|---|---|
| Collector‑emitter voltage (VCE(s)) | 20 V |
| Collector‑base voltage (VCBO) | 20 V |
| Emitter‑base voltage (VEB) | 2 V |
| Collector current (IC) | 90 mA |
| Base current (IB) | 9 mA |
| Total power dissipation (PD) | 300 mW |
| Operating temperature (Tg) | 104 °C |
| Junction temperature (Tj) | 150 °C |
| Thermal resistance (junction‑to‑case) | 155 K/W |
| Package type | SOT‑323 |
The BFR93AW can handle up to 90 mA of collector current.
The transistor is supplied in a SOT‑323 surface‑mount package.
The device is rated for a maximum collector‑emitter voltage of 12 V.