This is a GCTFP P-TO220-3-31 type Schottky diode produced by GCT. Its maximum dynamic resistance is 100mΩ, the maximum reverse voltage is 5V, the maximum reverse current is 1A, and the maximum working temperature is 150℃
This document provides detailed electrical, thermal, and mechanical data for the Infineon SPPO3N60C3 (also listed as SPA03N60C3) power MOSFET. It includes maximum ratings, characteristic curves, and package information for design engineers.
Key sections cover maximum ratings, thermal resistance, on‑state resistance, capacitances, gate charge, and switching performance, along with dimensional drawings of the PG‑TO220 package.
| Continuous drain current (Id) @ 25°C | 3.2 A |
|---|---|
| Pulsed drain current (Id,pulse) | 9.6 A |
| Avalanche energy (single pulse) | 100 mJ |
| Gate‑source voltage (static) | +20 V |
| Power dissipation @ 25°C | 38 W |
| Operating temperature range | -55 °C to +150 °C |
| Package type | PG‑TO220 (Fully isolated, 2500 VAC, 1 min) |
The maximum continuous drain current is 3.2 A at 25 °C.
It uses a PG‑TO220 fully isolated package rated for 2500 VAC for up to 1 minute.
The avalanche energy per single pulse is rated at 100 mJ.