Infineon's BAR14-1, BAR15-1, BAR16-1, and BAR61 are silicon PIN diodes described for use as RF switches and RF attenuators at frequencies above 10 MHz. The document lists BAR14-1, BAR15-1, and BAR16-1 in SOT23 packages and BAR61 in SOT143.
The datasheet provides maximum ratings, thermal resistance, DC and AC characteristics, and characteristic curves. It also includes an application circuit for attenuation networks with diode BAR61. Maximum ratings include 100 V diode reverse voltage, 140 mA forward current, 250 mW total power dissipation, and a 150 °C junction temperature.
| Diode reverse voltage (VR) | 100 V |
|---|---|
| Forward current (IF) | 140 mA |
| Total power dissipation (Ptot) | 250 mW |
| Junction temperature (Tj) | 150 °C |
| Operating temperature range (Top) | -55 ... 125 °C |
| Storage temperature (Tstg) | -55 ... 150 °C |
| Forward voltage (VF) | 1.05 V typ, 1.25 V max at IF = 100 mA |
| Diode capacitance (CT) | 0.2 pF typ at VR = 0 V, f = 100 MHz |
| Thermal resistance junction-soldering point (RthJS) | < 340 K/W |
They are described as RF switches and RF attenuators for frequencies above 10 MHz.
BAR61 is listed in a SOT143 package.
The maximum diode reverse voltage is 100 V.
An application circuit is included for attenuation networks with diode BAR61.